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Creators/Authors contains: "Hu, Zongyang"

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Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

https://doi.org/10.1117/12.2579478

De Santi, Carlo; Fabris, Elena; Caria, Alessandro; Buffolo, Matteo; Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace; Meneghesso, Gaudenzio; et al (March 2021, PROCEEDINGS OF SPIE)
Teherani, Ferechteh H.; Look, David C.; Rogers, David J. (Ed.)
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Field-Plated Ga ₂ O ₃ Trench Schottky Barrier Diodes With a BV ² /$$R_{\text{on,sp}}$$ of up to 0.95 GW/cm ²

https://doi.org/10.1109/LED.2019.2953559

Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace (January 2020, IEEE Electron Device Letters)

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Fin-channel orientation dependence of forward conduction in kV-class Ga ₂ O ₃ trench Schottky barrier diodes

https://doi.org/10.7567/1882-0786/ab206c

Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace (June 2019, Applied Physics Express)

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Blue (In,Ga)N light-emitting diodes with buried n ⁺ – p ⁺ tunnel junctions by plasma-assisted molecular beam epitaxy

https://doi.org/10.7567/1347-4065/ab1e78

Cho, YongJin; Bharadwaj, Shyam; Hu, Zongyang; Nomoto, Kazuki; Jahn, Uwe; Xing, Huili Grace; Jena, Debdeep (June 2019, Japanese Journal of Applied Physics)

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GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

https://doi.org/10.1109/LED.2020.2984727

Li, Lei; Nomoto, Kazuki; Pan, Ming; Li, Wenshen; Hickman, Austin; Miller, Jeffrey; Lee, Kevin; Hu, Zongyang; Bader, Samuel James; Lee, Soo Min; et al (May 2020, IEEE Electron Device Letters)

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Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

https://doi.org/10.7567/1347-4065/ab0f1b

Li, Wenshen; Nomoto, Kazuki; Sundar, Aditya; Lee, Kevin; Zhu, Mingda; Hu, Zongyang; Beam, Edward; Xie, Jinqiao; Pilla, Manyam; Gao, Xiang; et al (June 2019, Japanese Journal of Applied Physics)

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